1N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
1N60-A
600
V
Drain-Source Voltage
V
DSS
1N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 1)
I
DM
4.8
A
Single Pulsed (Note 2)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 1)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
SOT-223
1
W
TO-251
28
W
TO-252
28
W
Power Dissipation
P
D
TO-220
40
W
TO-220F
21
W
TO-92(T
a
=25℃)
1
W
TO-126
12.5
W
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-92
TO-126
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-126
SYMBOL
RATINGS
150
110
110
62.5
62.5
140
132
14
4.53
4.53
3.13
5.95
10
UNIT
Junction-to-Ambient
θ
JA
℃/W
Junction-to-Case
θ
Jc
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-052,I
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