1N60A
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN
600
TYP MAX UNIT
V
μA
nA
nA
V/°C
4.2
15
100
20
3
12
11
40
18
8
1.8
4.0
34
32
90
46
10
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
Breakdown Voltage Temperature
I
D
= 250μA
△BV
DSS
/
△
T
J
Coefficient
referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
V
DD
=300V, I
D
=0.5A, R
G
=5Ω
Turn-On Rise Time
t
R
(Note 1,2)
Turn-Off Delay Time
t
D (OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=0.8A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
SD
= 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
10
100
-100
0.4
2.0
11
1.6
1.2
4.8
136
0.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-091,F
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