1N60A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
0.5
A
Pulsed Drain Current (Note 2)
I
DM
2
A
Single Pulse(Note 3)
E
AS
50
mJ
Avalanche Energy
3.6
4.0
mJ
Repetitive(Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
3
W
P
D
Derate above 25°C
25
mW/°C
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, I
AS
=0.8A, V
DD
=50V, R
G
=0Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt≤100A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
120
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-091,F
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