1N60
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Switching Characteristics
Turn-On Delay Time
t
D (ON)
Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
Turn-Off Delay Time
t
D (OFF)
(Note 1,2)
Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=1.2A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A,
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
V
GS
=0V, I
SD
= 1.2A
di/dt = 100A/µs (Note1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse Width
≤300µs,
Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
MIN
Power MOSFET
TYP
5
25
7
25
5.0
1.0
2.6
MAX
20
60
25
60
6.0
UNIT
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
1.4
1.2
4.8
160
0.3
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