1N50Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±20
V
I
D
1.3 (Note 2)
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 3)
I
DM
5 (Note 2)
A
Avalanche Current (Note 3)
I
AR
1.3
A
113
mJ
Single Pulsed (Note 4)
E
AS
Avalanche Energy
Repetitive (Note 5)
E
AR
2.6
mJ
Power Dissipation
40
W
P
D
Derate above 25°C
0.32
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 120mH, I
AS
= 1.3A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= 25°C
5. I
SD
≤
1.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.13
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=500V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=0.65A
MIN TYP MAX UNIT
500
1
+5
-5
2.0
4.6
220
30
11
4.0
6.0
290
35
13
V
µA
µA
µA
V
Ω
pF
pF
pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-726.b
UTC-IC [ UNISONIC TECHNOLOGIES ]
