1N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
1.4
A
Drain Current
5.6
A
Pulsed (Note 2)
I
DM
Avalanche Current (Note 2)
I
AR
1.4
A
Single Pulsed (Note 3)
E
AS
85
mJ
Avalanche Energy
2.5
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
25
W
Power Dissipation
TO-92
2.5
W
P
D
TO-220
0.2
W/°C
Derate above 25°C
0.02
W/°C
TO-92
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 75mH, I
AS
= 1.4A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-92
TO-220
TO-92
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
140
5.0
50
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-529.b
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