1N40A
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
1
A
Drain Current
Pulsed (Note 2)
I
DM
4
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
40
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
1
W
Power Dissipation
P
D
TO-251
25
W
SOT-223
125
W/°C
Derate above 25°C
P
D
TO-251
0.2
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 80mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
150
110
125
5
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
SOT-223
Junction to Ambient
TO-251
SOT-223
Junction to Case
TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R205-029.b
UTC-IC [ UNISONIC TECHNOLOGIES ]
