UNISONIC TECHNOLOGIES CO., LTD
19N10
100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor
control.
Power MOSFET
FEATURES
* R
DS(ON)
= 0.1Ω
@V
GS
= 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
19N10L-T3P-T
19N10G-T3P-T
19N10L-TA3-T
19N10G-TA3-T
19N10L-TM3-T
19N10G-TM3-T
19N10L-TN3-R
19N10G-TN3-R
19N10L-TQ2-R
19N10G-TQ2-R
19N10L-TQ2-T
19N10G-TQ2-T
Package
TO-3P
TO-220
TO-251
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-261.D
UTC-IC [ UNISONIC TECHNOLOGIES ]
