19N10
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=80V, I
D
=19A, V
GS
=10V
Gate Source Charge
Q
GS
(Note 1, 2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=50V, I
D
=19A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=15.6A
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
=19A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle≤ 2%
Note:
2. Essentially independent of operating temperature
MIN
Power MOSFET
TYP
19
3.9
9.0
7.5
150
20
65
MAX UNIT
25
nC
25
310
50
140
1.5
15.6
62.4
ns
ns
ns
ns
V
A
A
ns
nC
78
200
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