欢迎访问ic37.com |
会员登录 免费注册
发布采购

18N60G-T47-T 参数 Datasheet PDF下载

18N60G-T47-T图片预览
型号: 18N60G-T47-T
PDF下载: 下载PDF文件 查看货源
内容描述: 18A , 600V N沟道功率MOSFET [18A,600V N-CHANNEL POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 3 页 / 143 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
 浏览型号18N60G-T47-T的Datasheet PDF文件第1页浏览型号18N60G-T47-T的Datasheet PDF文件第3页  
18N60
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
18
A
Pulsed Drain Current
I
DM
45
A
Avalanche Current
I
AR
18
A
1000 (Note 2)
Single Pulsed
E
AS
mJ
Avalanche Energy
Repetitive
E
AR
30
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
P
D
360
W
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.18mH, I
AS
=18A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°С
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θ
JC
RATINGS
0.35
UNIT
°С/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=600V, V
GS
=0V
Gate-Body Leakage Current
I
GSS
V
DS
=0V, V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DS
=0.5V
DSS
,
I
D
=18A, R
G
=5Ω (External)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=0.5V
DSS
,
Gate Source Charge
Q
GS
I
D
=9A
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
F
=I
S
,V
GS
=0V (Note )
Maximum Continuous Drain-Source
I
S
V
GS
=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Repetitive
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, dI
F
/dt=100A/µs,
I
S
=18A, V
R
=100V
Reverse Recovery Charge
Q
RR
Note: Pulse Test: Pulse Width
300µs, Duty Cycle
2%.
MIN
600
25
±100
2.0
0.36
2500
280
23
21
22
62
22
50
15
18
1.5
18
54
200
0.8
4.0
0.5
TYP
MAX UNIT
V
µA
nA
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-221.F