18N60
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Preliminary
(T
C
=25℃, unless otherwise specified)
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATINGS
UNIT
V
DSS
600
V
V
GSS
±30
V
I
D
18
A
I
DM
45
A
I
AR
18
A
Single Pulsed
E
AS
1000
mJ
Avalanche Energy
30
Repetitive
E
AR
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
P
D
360
W
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Case
SYMBOL
θ
JC
MIN
TYP
MAX
0.35
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=V
DSS
, V
GS
=0V
Gate-Body Leakage Current
I
GSS
V
DS
=0V, V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5I
D25
(Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DS
=0.5V
DSS
,
I
D
=I
D25
, R
G
=5Ω (External)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=0.5V
DSS
,
Gate Source Charge
Q
GS
I
D
=0.5I
D25
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
F
=I
S
,V
GS
=0V (Note 1)
Maximum Continuous Drain-Source
I
S
V
GS
=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Repetitive
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, di/dt=100A/s,
I
S
=18A, V
R
=100V
Reverse Recovery Charge
Q
RR
Note 1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
MIN
600
25
±100
2.0
4.0
400
2500
280
23
21
22
62
22
50
15
18
1.5
18
54
200
0.8
TYP
MAX UNIT
V
µA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-221.Aa
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