18N50
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
500
V
Gate to Source Voltage
V
GSS
±30
V
18
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
72 (Note 5)
A
Single Pulsed (Note 3)
E
AS
945
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
23.5
mJ
Avalanche Current (Note 2)
I
AR
18
A
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F1
38.5
Power Dissipation
TO-220F2
P
D
40.5
W
TO-263
23.5
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=5.2mH, I
AS
=18A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤18A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F1
Junction to Case
TO-220F2
TO-263
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
3.3
3.0
0.53
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-477.G
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