15N65
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Avalanche Current (Note 2)
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
650
V
±30
V
15
A
15
A
Continuous
Continuous Drain Current
Pulsed (Note 2)
60
A
637
mJ
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
25.0
mJ
Peak Diode Recovery dv/dt (Note 4)
4.5
V/ns
TO-220F2
38.5
Power Dissipation
P
D
W
TO-247
312
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=5.23mH, I
AS
=15A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤15A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F2
TO-247
TO-220F2
TO-247
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
40
3.3
0.4
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-481.d
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