15N20
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
DSS
200
V
V
GSS
±30
V
15
A
Continuous
I
D
Continuous Drain Current
Pulsed
I
DM
60
A
Single Pulsed Avalanche Current
I
AS
15
A
Single Pulsed Avalanche Energy
E
AS
340
mJ
Power Dissipation
P
D
83
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
110
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=200V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=120V, I
D
=18A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω,
V
GS
=10V, R
L
=30
Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=15A, V
GS
=0V
MIN TYP MAX UNIT
200
V
1
µA
+100 nA
-100 nA
5
0.12 0.14
V
Ω
3
830 1080 pF
200 260 pF
25
33
pF
20
5.6
10
16
133
38
62
26
nC
nC
nC
ns
ns
ns
ns
A
A
V
40
275
85
135
15
60
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-717.a
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