14N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
14
A
Pulsed Drain Current (Note 2)
I
DM
48
A
Avalanche Current (Note 2)
I
AR
14
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
P
D
150
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mH, I
AS
= 13A, V
DD
= 50V, R
G
= 25Ω ,Starting T
J
= 25°C
4. I
SD
≤13.A,
di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.83
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 1mA
500
V
V
DS
= 500V, V
GS
= 0V
10
μA
100 nA
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
V
GS
= -20V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250mA,Referenced to 25°C
0.5
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 100μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 6A
0.34 0.38
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
2000
pF
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
238
pF
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
55
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
24
nS
Turn-On Rise Time
t
R
16
nS
V
DD
=250V, I
D
=14A,
R
G
=25Ω (Note 1,2)
Turn-Off Delay Time
t
D(OFF)
54
nS
Turn-Off Fall Time
t
F
12
nS
Total Gate Charge
Q
G
69
92
nC
V
DS
=400V, I
D
=12A,
Gate-Source Charge
Q
GS
12
nC
V
GS
=10 V (Note 1,2)
Gate-Drain Charge
Q
GD
31
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-720.a
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