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13N50G-TA3-T 参数 Datasheet PDF下载

13N50G-TA3-T图片预览
型号: 13N50G-TA3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 500V N沟道MOSFET [500V N-CHANNEL MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 6 页 / 178 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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13N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 13 A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
= 13A,
dI
F
/ dt = 100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature
MIN
TYP
MAX UNIT
1.4
13
52
290
2.6
V
A
A
nS
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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