12P10
ABSOLUTE MAXIMUM RATINGS
(T
c
=25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
-9.4
A
Pulsed Drain Current (Note 2)
I
DM
-37.6
A
Avalanche Current (Note 2)
I
AR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
370
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.0
V/ns
TO-251/ TO-252
50
Power Dissipation
P
D
W
TO-263
65
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L=6.3mH, I
AS
=-9.4A, V
DD
=-25V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤-11.5A,
di/dt≤300μA/ s, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
TO-251/ TO-252
Junction to Ambient
TO-263
TO-251/ TO-252
Junction to Case
TO-263
SYMBOL
θ
JA
θ
JC
RATINGS
110
62.5
2.5
2.31
UNIT
℃/W
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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