12P10
ELECTRICAL CHARACTERISTICS
(T
c
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Drain-Source Leakage Current
I
DSS
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Static Drain-Source On-Resistance
R
DS(ON)
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
TEST CONDITIONS
V
GS
=0 V, I
D
=-250µA
I
D
=-250µA,Referenced to 25°C
V
DS
=-100V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.7A
V
DS
=-40V, I
D
=-4.7A (Note 1)
Power MOSFET
MIN TYP MAX UNIT
-100
V
-0.1
V/°C
-1
µA
±100 nA
-4.0
0.24 0.29
6.3
620
220
65
800
290
85
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
-2.0
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=-50V, I
D
=-11.5A,
R
G
=25Ω(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=-9.4A
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
Note:
2. Essentially independent of operating temperature
V
DS
=-80V, I
D
=-11.5A,
V
GS
=-10V(Note 1, 2)
21
27
4.6
11.5
15
40
160 330
35
80
60 130
-4.0
-9.4
-37.6
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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