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12NN10L-S08-R 参数 Datasheet PDF下载

12NN10L-S08-R图片预览
型号: 12NN10L-S08-R
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型功率MOSFET [DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 156 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
12NN10
Preliminary
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
12NN10
is a dual N-Channel enhancement mode power
MOSFET, it provides designer with fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.
SOP-8
FEATURES
* Low Gate Charge (Typically 10nC)
* 2.5A, 100V, 150mΩ @ V
GS
=10V
* Fast Switching Speed
* Simple Drive Requirement
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1
12NN10L-S08-R 12NN10G-S08-R
SOP-8
S1
Note: Pin Assignment: G: Gate D: Drain
S: Source
2
G1
Pin Assignment
3
4
5
6
S2 G2 D2 D2
7
D1
8
D1
Packing
Tape Reel
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