12N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
±30
V
I
D
12
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
48
A
Avalanche Current (Note 2)
I
AR
12
A
TO-220
225
W
Power Dissipation
P
D
TO-220F1
51
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=720V,
Gate to Source Charge
Q
GS
I
D
=12A (Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=450V, I
D
=12A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=12A,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
900
1.0
10
100
100
-100
3.0
5.0
0.8 0.95
4200
315
90
123 155
27
45
49
80
18
50
12
50
51 100
18
50
12
48
1.4
1000
17.0
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-593.b
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