12N80 参数 Datasheet PDF下载

12N80

PARAMETER

Preliminary

SYMBOL

V

DSS

V

GSS

I

D

I

DM

I

AR

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C unless otherwise specified)

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Continuous (T

C

=25°C)

12

A

Drain Current

48

A

Pulsed (Note 2)

Avalanche Current (Note 2)

12

A

TO-220

225

W

Power Dissipation

P

D

TO-220F1

51

W

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F1

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

0.56

2.43

UNIT

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-594.b