12N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=12A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=12A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=12A, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800
1.0
10
100
100
-100
3.0
0.75
4200
315
90
123
27
49
18
12
51
18
155
45
80
50
50
100
50
12
48
1.4
1000
17.0
5.0
0.9
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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www.unisonic.com.tw
3 of 6
QW-R502-594.b
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