12N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
12
A
12
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
48
A
790
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220 / TO-262
225
W
Power Dissipation
P
D
TO-220F / TO-220F1
51
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, I
AS
= 12A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
12A, di/dt
≤200A/s,
V
DD
≤BV
DSS
Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220 / TO-262
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-583.B
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