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12N65L-TF1-T 参数 Datasheet PDF下载

12N65L-TF1-T图片预览
型号: 12N65L-TF1-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,]
分类和应用:
文件页数/大小: 8 页 / 412 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
12N65
12A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N65
are N-Channel enhancement mode power field
effect transistors (MOSFET) which are produced by using UTC’s
proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.
FEATURES
* R
DS(ON)
< 0.85Ω @ V
GS
= 10V, I
D
= 6.0A
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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