欢迎访问ic37.com |
会员登录 免费注册
发布采购

12N60_12 参数 Datasheet PDF下载

12N60_12图片预览
型号: 12N60_12
PDF下载: 下载PDF文件 查看货源
内容描述: 12A , 600V N沟道功率MOSFET [12A, 600V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 366 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
 浏览型号12N60_12的Datasheet PDF文件第2页浏览型号12N60_12的Datasheet PDF文件第3页浏览型号12N60_12的Datasheet PDF文件第4页浏览型号12N60_12的Datasheet PDF文件第5页浏览型号12N60_12的Datasheet PDF文件第6页浏览型号12N60_12的Datasheet PDF文件第7页  
UNISONIC TECHNOLOGIES CO., LTD
12N60
12A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N60
are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
1
TO-220F
Power MOSFET
1
TO-220
1
TO-220F1
FEATURES
* R
DS(ON)
= 0.8Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-262
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
12N60L-TA3-T
12N60G-TA3-T
TO-220
12N60L-TF1-T
12N60G-TF1-T
TO-220F1
12N60L-TF3-T
12N60G-TF3-T
TO-220F
12N60L-T2Q-T
12N60G-T2Q-T
TO-262
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-170.I