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12N60_10 参数 Datasheet PDF下载

12N60_10图片预览
型号: 12N60_10
PDF下载: 下载PDF文件 查看货源
内容描述: 12安培, 600/650伏特N沟道MOSFET [12 Amps, 600/650 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 7 页 / 358 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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12N60
TYPICAL CHARACTERISTICS
Maximum Safe Operating Area
10
Drain Current, I
D
(A)
2
Power MOSFET
10
1
100μs
1ms
10ms
100ms
Notes:
1.T
C
=25°C
2.T
J
=150°C
3.Single Pulse
DC
On-Resistance, R
DS(ON)
(mµ)
Operation in This Area
is Limited by R
DS(ON)
10
0
10
-1
10
-2
10
0
10
1
10
2
Drain Source Voltage, V
DS
(A)
10
3
70
65
60
55
50
45
40
35
30
25
20
15
10
0
On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-4.5V
V
GS
=-10V
5
10
15
20
Drain Current, -I
D
(A)
25
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Thermal Response, Z
θJC
(t)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-170.E