12N40L-TF1-T 参数 Datasheet PDF下载

12N40

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V

DSS

400

V

Gate-Source Voltage

V

GSS

±30

V

Continuous (T

C

=25°C)

I

D

12

A

Drain Current

48

A

Pulsed (Note 2)

I

DM

Single Pulsed Avalanche Energy

E

AS

474

mJ

TO-220

192

W

Power Dissipation

TO-220F1

42

W

P

D

TO-220

1.53

W/°C

Derate above 25°C

TO-220F1

0.33

W/°C

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F1

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

0.65

3.0

UNIT

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250µA, V

GS

=0V

Drain-Source Leakage Current

I

DSS

V

DS

=400V, V

GS

=0V

Forward

V

GS

=+30V, V

DS

=0V

Gate- Source Leakage Current

I

GSS

Reverse

V

GS

=-30V, V

DS

=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(TH)

V

DS

=V

GS

, I

D

=250µA

Static Drain-Source On-State Resistance

R

DS(ON)

V

GS

=10V, I

D

=12A

DYNAMIC PARAMETERS

Input Capacitance

C

ISS

V

GS

=0V, V

DS

=25V, f=1.0MHz

Output Capacitance

C

OSS

Reverse Transfer Capacitance

C

RSS

SWITCHING PARAMETERS

Turn-ON Delay Time

t

D(ON)

V

DD

=200V, I

D

=12A, R

G

=25Ω

Rise Time

t

R

(Note 1, 2)

Turn-OFF Delay Time

t

D(OFF)

Fall-Time

t

F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

V

SD

I

S

=12A, V

GS

=0V

Maximum Body-Diode Continuous Current

I

S

Maximum Body-Diode Pulsed Current

I

SM

Notes: 1. Pulse Test: Pulse width

≤

300µs, Duty cycle

≤

2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

400

V

1

µA

+100 nA

-100 nA

4.0

0.34 0.47

V

Ω

2.0

3000 pF

900 pF

400 pF

30

105

480

140

50

150

750

200

1.4

12

48

ns

ns

ns

ns

V

A

A

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