12N10
PARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
RATINGS
UNIT
100
V
±20
V
12
A
T
C
= 25°C
I
D
Continuous
Drain Current
T
C
= 100°C
8.5
A
Pulsed (Note 2)
I
DM
48
A
30
W
Power Dissipation
Derating Factor
0.2
W/°C
P
D
Avalanche Energy (Note 3)
E
AS
100
mJ
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting T
J
= 25°C, I
D
= 12A, V
DD
= 50V
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
100
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max rating, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=6A
MIN TYP MAX UNIT
100
V
1
µA
+100 nA
-100 nA
3
0.15 0.18
430
90
20
V
Ω
pF
pF
pF
1
V
GS
=0V, V
DS
=25V, f=1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-737.a
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