12N06 参数 Datasheet PDF下载

12N06

PARAMETER

Drain-Source Voltage (V

GS

=0)

Drain-Gate Voltage (R

GS

=20KΩ))

Gate-Source Voltage

Preliminary

SYMBOL

V

DSS

V

DGR

V

GSS

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C, unless otherwise specified)

RATINGS

UNIT

60

V

60

V

±20

V

T

C

= 25°C

12

A

I

D

Continuous

Drain Current

T

C

= 100°C

8.5

A

Pulsed (Note 2)

I

DM

48

A

Power Dissipation

P

D

30

W

Derating Factor

0.2

W/°C

Peak Diode Recovery dv/dt (Note 3)

dv/dt

15

V/ns

Avalanche Energy (Note 4)

E

AS

100

mJ

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55~+150

°C

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. I

SD

≤

12A, di/dt

≤

200A/µs, V

DS

≤

40V, T

J

≤

T

JMAX

4. Starting T

J

= 25°C, I

D

= 6A, V

DD

= 30V

THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θ

JA

θ

JC

RATINGS

100

5

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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