10NN15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
150
V
Gate-Source Voltage
V
GSS
±20
V
Continuous (Note 3)
I
D
3
A
Drain Current
12
A
Pulsed (Note 2)
I
DM
Power Dissipation
P
D
2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θ
JA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=150V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=120V, I
D
=3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DS
=75V, V
GS
=10V, I
D
=3A,
R
G
=3.3Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=3A, V
GS
=0V, dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse width
≤
300µs, duty cycle
≤
2% .
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
150
V
10
µA
+100 nA
-100 nA
4
400
420
60
40
10
2
4
6.5
7
14
35
672
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
µC
2
16
1.3
40
75
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-565.b
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