10N90
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
900
V
Gate-Source Voltage
±30
V
Continuous
10
A
Drain Current
Pulsed (Note 1)
40
A
Avalanche Current (Note 1)
10
A
Single Pulsed (Note 2)
794
mJ
Avalanche Energy
Repetitive (Note 1)
28
mJ
Peak Diode Recovery dv/dt (Note 3)
1.5
V/ns
TO-220
156
W
Power Dissipation
P
D
TO-220F1
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-502.a
UTC-IC [ UNISONIC TECHNOLOGIES ]
