10N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current (T
C
= 25°С)
I
D
10
A
Pulsed Drain Current (Note 2)
I
DM
40
A
Avalanche Current (Note 2)
I
AR
10
A
Single Pulsed (Note 3)
E
AS
920
mJ
Avalanche Energy
24
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
Power Dissipation
W
TO-220F1
36
P
D
TO-3P
1.92
°С/W
Linear Derating Factor above T
C
= 25°С
TO-220F1
0.288
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, I
AS
=10A, V
DD
=50V, R
G
=25Ω, Satarting T
J
=25°C
4. I
SD
≤
10 A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Satarting T
J
=25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-3P
TO-220F1
TO-3P
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
40
62.5
0.52
3.47
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
ΔBV
DSS
/ΔT
J
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
V
DS
=800V, V
GS
=0 V
V
DS
=640V, T
C
=125°C
V
DS
=0 V, V
GS
= ±30 V
I
D
=250 µA, Referenced to 25°C
V
DS
=V
GS
, I
D
=250 µA
V
GS
= 10 V, I
D
= 5.0 A
3.0
0.93
MIN
800
10
100
±100
0.98
5.0
1.1
TYP
MAX UNIT
V
µA
nA
mV/°С
V
Ω
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
2150 2800
180
230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
V
DD
=400V, I
D
=10.0A,
R
G
=25Ω(Note 1,2)
V
DS
=640V, V
GS
=10V,
I
D
=10.0A (Note 1,2)
ns
nC
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