10N70
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
V
GS
= 0V, I
D
= 250μA
700
V
V
DS
= 700V, V
GS
= 0V
10
µA
100 nA
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
= 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5A
0.9
1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1570 2040 pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
166 215 pF
Reverse Transfer Capacitance
C
RSS
18
24
pF
SWITCHING CHARACTERISTICS
23
55
ns
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
69
150 ns
V
DD
=350V, I
D
=10A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
144 300 ns
Turn-Off Fall Time
t
F
77
165 ns
44
57
nC
Total Gate Charge
Q
G
V
DS
=560V, I
D
=10A, V
GS
=10 V
Gate-Source Charge
Q
GS
6.7
nC
(Note 1, 2)
Gate-Drain Charge
Q
GD
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
40
A
Forward Current
Reverse Recovery Time
t
rr
420
ns
V
GS
= 0 V, I
S
= 10A,
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
4.2
µC
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-572.c
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