10N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
38
A
700
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation TO-220F/TO-220F1
P
D
50
W
TO-263
178
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-263
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-588.C
UTC-IC [ UNISONIC TECHNOLOGIES ]
