10N65
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized)
Maximum Safe Operating Area
10
2
Operation in this Area is United by R
DM
10μs
Drain Current, I
D
(A)
10
1
DC
1ms
10ms
100ms
Drain Current, I
D
(A)
10
3
100μs
10
0
Notes:
1.T
C
=25℃
2.T
J
=150℃
3.Single Pulse
10
-1 0
10
10
2
10
1
Drain-Source Voltage, V
DS
(V)
Drain-Source On-Resistance, R
DS(ON)
(Normalized)
Maximum Drain Current vs. Case Temperature
10
8
6
4
2
0
25
50
75
100
125
Case Temperature, T
C
(℃)
150
Transient Thermal Response Curve
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
Single pulse
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.T
JW
-T
C
=P
DW
-Z
θ
JC
(t)
P
DW
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration, t
1
(sec)
10
0
10
1
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