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10N60G-TF2-T 参数 Datasheet PDF下载

10N60G-TF2-T图片预览
型号: 10N60G-TF2-T
PDF下载: 下载PDF文件 查看货源
内容描述: 10A , 600V N沟道功率MOSFET [10A, 600V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 393 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
10N60
10A, 600V N-CHANNEL
POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The
UTC 10N60
is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220F
FEATURES
* R
DS(ON)
= 0.8Ω@V
GS
=10V
* Low gate charge ( typical 44nC)
* Low C
RSS
( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
1
TO-220F1
1
TO-220F2
SYMBOL
2.Drain
1
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N60L-TA3-T
10N60G-TA3-T
TO-220
10N60L-TF1-T
10N60G-TF1-T
TO-220F1
10N60L-TF2-T
10N60G-TF2-T
TO-220F2
10N60L-TF3-T
10N60G-TF3-T
TO-220F
10N60L-TQ2-R
10N60G-TQ2-R
TO-263
10N60L-TQ2-T
10N60G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2012 Unisonic Technologies Co., Ltd
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