10N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=10A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=10A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 10A,
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
23
55
69 150
144 300
77 165
44
57
6.7
18.5
1.4
10
38
420
4.2
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
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QW-R502-119.J
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