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10N60_12 参数 Datasheet PDF下载

10N60_12图片预览
型号: 10N60_12
PDF下载: 下载PDF文件 查看货源
内容描述: 10A , 600V N沟道功率MOSFET [10A, 600V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 393 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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10N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
38
A
700
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-263
156
Power Dissipation
TO-220F/TO-220F1
P
D
50
W
TO-220F2
52
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Starting T
J
= 25°C
4. I
SD
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-263
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
2.4
0.7
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
600
V
1
µA
100 nA
-100 nA
V/°C
4.0
0.8
V
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
V
DS
=0V, V
GS
=0V, f =1MHz
0.7
2.0
0.72
1570 2040 pF
166 215 pF
18
24
pF
0.25
1.4
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-119.J