10N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
10N60-A
600
V
Drain-Source Voltage
V
DSS
10N60-B
650
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
Continuous
I
D
10
A
Drain Current
38
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
700
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation
P
D
TO-220F/TO-220F1
50
W
TO-263
178
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-263
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
10N60-A
10N60-B
SYMBOL
BV
DSS
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
V
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, I
D
= 250μA
600
V
GS
= 0V, I
D
= 250μA
650
Drain-Source Leakage Current
V
DS
= 600V, V
GS
= 0V
1
Forward
V
GS
= 30 V, V
DS
= 0 V
100
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
= 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4.75A
0.6 0.73
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1570 2040
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
166 215
Reverse Transfer Capacitance
C
RSS
18
24
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
23
55
V
DD
=300V, I
D
=10A, R
G
=25Ω
Turn-On Rise Time
t
R
69
150
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
144 300
Turn-Off Fall Time
t
F
77
165
Total Gate Charge
Q
G
44
57
V
DS
=480V, I
D
=10A, V
GS
=10 V
Gate-Source Charge
Q
GS
6.7
(Note 1, 2)
Gate-Drain Charge
Q
GD
18.5
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