10N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
10 (Note 2)
A
Drain Current
40 (Note 2)
A
Pulsed (Note 3)
I
DM
Avalanche Current (Note 3)
I
AR
10
A
Single Pulsed (Note 4)
E
AS
388
mJ
Avalanche Energy
14.3
mJ
Repetitive (Note 5)
E
AR
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
143
Power Dissipation
W
TO-220F1
48
P
D
TO-220
1.14
W/°C
Derate above 25°C
TO-220F1
0.38
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 7mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
10A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.87
2.58
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-531.c
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