10N50K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
10 (Note 2)
A
Drain Current
Pulsed (Note 3)
I
DM
20 (Note 2)
A
Avalanche Current (Note 3)
I
AR
10
A
Avalanche Energy
Single Pulsed (Note 4)
E
AS
245
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
Power Dissipation
48
W
P
D
Derate above 25°C
0.38
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
4. L = 10mH, I
AS
= 7A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
10A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.58
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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www.unisonic.com.tw
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