100N02
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
Power MOSFET
SYMBOL
RATINGS
UNIT
V
DSS
15
V
V
GSS
±8
V
100
A
Continuous
I
D
Drain Current
Pulsed
I
DM
400
A
Avalanche Energy
Single Pulsed
E
AS
12
mJ
Power Dissipation
P
D
54
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=15V
Forward
V
GS
=+8V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-8V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=55A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=20V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=12V, I
D
=0.3A,
Gate to Source Charge
Q
GS
I
G
=100µA
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=10V, I
D
=0.16A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=55A
MIN TYP MAX UNIT
15
V
1
μA
±100 nA
±100 nA
1.2
12
3565
1310
395
46
6.9
9.8
9
106
53
41
60
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
0.5
1.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-860.a
UTC-IC [ UNISONIC TECHNOLOGIES ]
