VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
FEATURES
Base
common
cathode
2
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and soft
recovery
3
Anode
1
2
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
D-PAK (TO-252AA)
Common
Anode
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
D-PAK (TO-252AA)
2x5A
200 V
0.98 V
23 ns
175 °C
Common cathode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
10
80
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 5 A
Forward voltage
V
F
I
F
= 10 A
I
F
= 5 A, T
J
= 150 °C
I
F
= 10 A, T
J
= 150 °C
V
R
= V
R
rated
Reverse leakage current per leg
I
R
C
T
L
S
T
J
= 125 °C, V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
Junction capacitance per leg
Series inductance
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
-
TYP.
-
0.90
0.98
0.74
0.84
-
-
-
17
8
MAX.
-
0.98
1.15
0.84
1.05
4
40
80
-
-
pF
nH
μA
V
UNITS
Document Number: 93263
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
