EC2612
Chip Mechanical Data
40GHz Super Low Noise PHEMT
Drain area= 60*60 µm
Gate area = 60*60 µm
Thickness = 100 µm
Recommended die attach :
Stage temperature = 300°C
(minimize temp. and time whenever
possible)
Preforms = Au/Sn (80/20)
Atmosphere : dry nitrogen or forming
gas flow
Recommended bonding :
∅
18
µm
very pure gold wire
(thermal compression)
The bonder should be properly
grounded
dimensions in µm
Source pads are directly connected to
back face metallization through the via
holes
Ordering Information
Chip form
: EC2612-99F/00
Information furnished is believed to be accurate and reliable. However
United Monolithic Semiconductors
S.A.S.
assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of
United Monolithic Semiconductors S.A.S..
Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
United Monolithic Semiconductors S.A.S.
products are not authorised for use
as critical components in life support devices or systems without express written approval from
United
Monolithic Semiconductors S.A.S.
Ref. : DSEC26120077 -17-Marc-00
8/8
Specifications subject to change without notice
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