EC2612
Symbol
Idss
Parameter
Saturated drain current
40GHz Super Low Noise PHEMT
Test
Conditions
Vds = 2V
Vgs = 0V
Vds = 2V
Ids = 0.1mA
Vds = 2V
Ids = 25mA
Vgsd = -2V
Min
10
Typ
35
Max
60
Unit
mA
Vp
Pinch off voltage
-1.0
-0.7
-0.3
V
Gm
Transconductance
50
70
mS
Igsd
Gate to source/drain leakage
current
5
µA
Dynamic characteristics
Tamb=25°C
Symbol
Parameter
Test
Conditions
F= 12GHz
NF
Minimum noise figure
Vds=2V
Ids=Idss/3
Ga
Associated Gain
F= 30GHz
F= 40GHz
F= 12GHz
F= 30GHz
F= 40GHz
13
9
8
Min
Typ.
0.5
1.3
1.5
14
10
9.5
dB
Max
0.7
1.7
1.9
dB
dB
Unit
dB
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vds
Vgs
Pt
Tch
Tstg
Parameter
Drain to source voltage
Gate to source voltage
Total power dissipation
Operating channel temperature
Storage temperature range
Values
3.5
-2.5
280
+175
-55 to +175
Units
V
V
mW
°C
°C
(1) Operation of this device above any one of these parameters may cause permanent damage
Ref. : DSEC26120077 -17-Marc-00
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
