CHX2090-QDG
Electrical Characteristics
12-24GHz Frequency Multiplier
Tamb = +25° Vd = 3.5V, Vg1 = -0.9V, Vg2 tuned for Id=65mA.
C,
Symbol
Fin
Fout
Pin
Pout 2Fin
Parameter
Input frequency range
Output frequency range
Input power
2Fin Output power for (11 < Fin < 12GHz)
for Fin = 13GHz
Min
11
22
Typ
Max
13
26
Unit
GHz
GHz
dBm
dBm
dBm
dBm
dBm
dBm
14
12
9
-10
0
-15
2.0:1
2.5:1
3.5
65
75
Is/Fin
Fin level at the output for (11 < Fin < 12)
for Fin = 13GHz
Is/3Fin
VSWRin
3Fin level at the output
Input VSWR
VSWRout Output VSWR
Vd
Id
Drain voltage
Bias current
V
mA
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Tj
Ta
Tstg
Drain bias current
Gate bias voltage
Parameter
Drain bias voltage
Values
5V
120
-2 to +0.4
175
-40 to +85
-55 to +155
Unit
V
mA
V
°
C
°
C
°
C
Junction temperature (2)
Operating temperature range
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Thermal Resistance channel to ground paddle =249°
C/W for Tamb. = +85° with 3.5V & 65mA.
C
Ref. : DSCHX2090QDG6332 - 28 Nov 06
2/10
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
