CHV2270
Fully Integrated Ku-band HBT VCO
Low cost / High linearity
GaAs Monolithic Microwave IC
Description
The CHV2270 is a multifunction for frequency
generation. It integrates a C-band balanced
voltage controlled oscillator providing a Ku-
band output (2
nd
harmonic), with different
modulation slopes control and other functions
like linearity improvement device making it
suitable for radar modulations. It also includes a
dual rank prescaler, an adjustable medium
power amplifier and a temperature sensor.
The VCO is fully integrated on HBT process.
On chip base-collector diodes are used as
varactors. All the active devices are internally
self biased to ease bias configuration. This chip
is compatible with automatic equipment for
assembly.
The circuit is manufactured on HBT process
2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
Vmt
Vft
Vct
SETN
GLIN
+V
SETHP
6.375GHz
RF_OUT
x2
12.75GHz
÷
N
VCO HBT
PresN_OUT
Vtemp
VCO multifunction block diagram
Main Features
-40° to +125° temperature range
C
C
Low temperature dependence
Fully integrated VCO architecture
Prescaler by up to F_out/128
Low phase noise
Low cost / high linearity oriented
Adjustable output power
Temperature sensor
Very simple bias configuration
Low DC power consumption
Automatic assembly oriented
SiNx layer protection
Chip size: 1.38 x 2.05 x 0.1mm
Typical VCO F_out(Vct) tuning (GHz)
12,8
12,75
F_out (GHz)
12,7
12,65
12,6
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
Typical free running VCO F_out(Vmt) tuning
Main Characteristics
Tamb = +25°
C
Symbol
F_out
PN
Pout
Parameter
Specified output frequency range
Phase noise @ F_out and 100kHz offset
Output power
Min
12.65
Typ
12.75
-100
5 or 14
Max
12.85
Unit
GHz
dBc/Hz
dBm
Ref.: DSCHV22707117 -27 Apr 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
