CHV2241
Electrical Characteristics
K-band Oscillator / Q-band Mixer
Full temperature range, used according to section “Typical assembly and bias configuration”
Symbol
F_rf
F_if
F_lo
P_lo
Pn
Parameter
RF frequency
IF frequency
Oscillator frequency (1)
Auxiliary LO output power (optional)
Phase noise (given at RF frequency) (2)
@ 1kHz
@ 10kHz
@ 100kHz
@ 200kHz
@ 1MHz
Frequency pushing vs positive supply
voltage
Conversion loss
RF input power at 1dB
LO leakage at IF port (3)
2LO leakage at RF port (3)
VSWR at RF input port
IF load impedance
Positive supply voltage (4)
Positive supply current
Negative supply voltage (4)
Negative supply current
Operating temperature range
Min
37.5
0.1
Typ
38.25
Max
39
1.5
Unit
GHz
GHz
dBm
dBc/Hz
(F_rf - F_if)/2
-15
-8
-4
-45
-78
-105
-114
-129
300
3
-13
7
-8
-25
-40
2:1
50
4.5
50
-4.5
6
-35
-68
-95
-104
-119
1000
11
0
-18
-30
2.5:1
4.6
90
-4.4
10
+100
P_V+
Lc
P_1dB_rf
Plolk_if
P2lo_rf
VSWR_rf
IMP_if
+V
+I
-V
-I
Top
kHz/v
dB
dBm
dBm
dBm
Ω
V
mA
V
mA
°C
4.4
-4.6
-40
(1) The centre frequency is given by the external passive resonator.
See part “Proposed
external high Q resonator“
for frequency temperature drift
example.
DRO frequency long term stability is DR environment stability dependant
(hermeticity …).
(2) This characteristic depends on the external resonator Q, the given performance has
been obtained by using an external dielectric resonator (see section “Proposed External
High Q resonator”)
(3) Without external filtering
(4) Negative supply voltage must be applied at least 1us before positive supply
voltage.
Ref. : DSCHV22411074 -15-Mar.-01
2/8
Specifications subject to change without notice
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