CHT4016-99F
4-16GHz 6-bit digital attenuator
Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
IL
Parameter
Min
Typ
Max Unit
Frequency range
4
16
GHz
dB
Insertion Loss
6.5
-15
-15
23
S11
Input Return Loss
dB
S22
Output Return Loss
Input power @1dB gain compression
Dynamic
dB
P1dB
Dyn
dBm
dB
31.5
0.5
LSB
Attenuator elementary step
Attenuation error
dB
Attenuation state 1-32
Attenuation state 33-50
Attenuation state 51-63
±0.5
±0.8
-1.5/+1
Att_err
dB
dB
Rms_att
RMS attenuation error
Phase variation
0.5
Attenuation state 1-32
Attenuation state 33-50
Attenuation state 51-63
0/+8
+2.5/+11
+2.5/+20
Phivar
°
Rms_phivar RMS phase variation
4.5
10
5
°
ns
V
Ts
V+
Switching time
Positive supply voltage
Negative supply voltage
Control voltage low level
Control voltage high level
Positive supply DC current
Negative supply DC current
V-
-5
0
V
Vctrl_L
Vctrl_L
I_V+
I_V-
-1.5
V
-5
6
-3.5
V
mA
mA
18
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
V+
Parameter
Values
6V
Unit
V
Maximum positive bias voltage
Minimum negative bias voltage
Maximum peak input power overdrive (2)
CTRL voltage (Vctrl_low, Vctrl_high)
Operating temperature range
V-
-6
V
P_RF
Ai
+25
dBm
V
-6, +2
Ta
-40 to +85
-55 to +150
°C
°C
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref. : DSCHT40163042 - 11 Feb 13
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
