CHT3091a
Electrical Characteristics (1)
Tamb = +25°C
Symbol
Fin
Attenuator
Parameter
Input frequency range
Minimum attenuation |S21| (VS=0V;VP=-5V)
DC-10GHz
DC-20GHz
DC-40GHz
Maximum attenuation |S21| (VS=-5V;VP=0V)
DC-10GHz
DC-20GHz
DC-40GHz
Input VSWR (any attenuation)
Min
DC
Typ
Max
40
Unit
GHz
Min Att.
2.2
3
3.5
4
dB
dB
dB
Max Att.
23
21
17
15
2:1
2:1
dB
dB
dB
VSWRin
VSWRout Output VSWR (any attenuation)
Pin1dB
Input 1dB compression point.(any attenuation)
15
dBm
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
VP
VS
Pin
Ta
Tstg
VP control voltage
VS control voltage
RF input power
Operating temperature range
Storage temperature range
Parameter
Values
-6V
-6V
20
-40 to +85
-55 to +155
Unit
V
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHT3091a6354 - 20 Dec 06
2/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
